| Title |
Analytical Modeling for Circuit Simulation of Amorphous Silicon Thin Film Transistors |
| Authors |
최홍석 ; 박진석 ; 오창호 ; 한철희 ; 최연익 ; 한민구 |
| Abstract |
We develop an analytical model of the static and the dynamic characteristics of amorphous silicon thin film transistors (a-Si TFTs) in order to incorporate into a widely used circuit simulator such as SPICE. The critical parameters considered in our analytical model of a-Si TFT are the power factor (XN) of saturation source-drain current and the effective channel length (L') at saturation region. The power factor, XN must not always obey so-called |