| Title |
A Study on the Structure Properties of Plasma Silicon Oxynitride Film |
| Keywords |
플라즈마 실리콘산화질화막 ; 수소함량 ; 막의 구조 ; 막의 조성 ; IR흡수피크 Plasma Silicon Oxynitride ; Hydrogen Content ; Film Structure ; Film Composition ; IR Absorption Peak |
| Abstract |
Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 900°C. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease. |