| Title |
A New GTO Driving Technique for Faster Switching |
| Authors |
Kim, Young-Seok(Kim, Young-Seok) ; Seo, Beom-Seok(Seo, Beom-Seok) ; Hyun, Dong-Seok(Hyun, Dong-Seok) |
| Keywords |
턴-오프 게이트 구동 회로 ; 측적 시간 ; 하강 시간 ; 후미 전류 ; 첨가 된 턴-오프 게이트 구동 회로 Turn-off Gate Drive Circuit ; Storage time ; Fall time ; Tail current ; Added turn-off gate drive circuit |
| Abstract |
This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance. |