| Title |
Effects of the thin SiO_{2} film at the Ti-Si interface on the formation of TiN/TiSi_2 bilayer |
| Keywords |
TiN/TiSi_2 bilayer ; competitive reaction ; rapid thermal annealing ; the structure and composition of the TiN and TiSi_2 |
| Abstract |
The properties of TiN/TiSi_{2} bilayer formed by a rapid thermal annealing is investigated when thin SiO_{2} film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi_{2} layer decreases with increasing SiO_{2} film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi_{2} bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN_{x}O_{y} due to the SiO_{2} layer at the Ti-Si interface but the structures of the TiN and TiSi_{2} layers were not changed.d.d. |