| Title |
A study on the breakdown characteristics of power p-n junction device using field limiting ring and side insulator wall |
| Keywords |
Zinc-Borosilicate glass ; Surface charge ; Field Limiting Ring |
| Abstract |
Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs. |