| Title |
The Fabrication of Four-Terminal Poly-Si TFTs with Buried Channel |
| Authors |
정상훈(Jeong, Sang-Hun) ; 박철민(Park, Cheol-Min) ; 유준석(Yu, Jun-Seok) ; 최형배(Choe, Hyeong-Bae) ; 한민구(Han, Min-Gu) |
| Keywords |
BC ; LBT ; four-terminal ; poly-Si ; TFT |
| Abstract |
Poly-Si TFTs(polycrystalline silicon thin film transistors) fabricated on a low cost glass substrate have attracted a considerable amount of attention for pixel elements and peripheral driving circuits in AMLCS(active matrix liquid crystal display). In order to apply poly-Si TFTs for high resolution AMLCD, a high operating frequency and reliable circuit performances are desired. A new poly-Si TFT with CLBT(counter doped lateral body terminal) is proposed and fabricated to suppress kink effects and to improve the device stability. And this proposed device with BC(buried channel) is fabricated to increase ON-current and operating frequency. Although the troublesome LDD structure is not used in the proposed device, a low OFF-current is successfully obtained by removing the minority carrier through the CLBT. We have measured the dynamic properties of the poly-Si TFT device and its circuit. The reliability of the TFTs and their circuits after AC stress are also discussed in our paper. Our experimental results show that the BC enables the device to have high mobility and switching frequency (33MHz at V_{DD} = 15 V). The minority carrier elimination of the CLBT suppresses kink effects and makes for superb dynamic reliability of the CMOS circuit. We have analyzed the mechanism in order to see why the ring oscillators do not operate by analyzing AC stressed device characteristics. |