| Title |
Modeling the Silicon Carbide Schottky Rectifiers |
| Authors |
이유상(Lee, Yu-Sang) ; 최연익(Choe, Yeon-Ik) ; 한민구(Han, Min-Gu) |
| Keywords |
6H-SiC RTD(reachthrough diode) ; breakdown voltage ; effective ionization coefficient |
| Abstract |
The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal-n^--n^+ Schottky structure or p^+-n^--n^+, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer. |