| Title |
Analytical Expressions for the Breakdown Voltage of Gated Diodes |
| Authors |
윤상복(Yun, Sang-Bok) ; 최연익(Choe, Yeon-Ik) |
| Keywords |
Gated Diode ; Breakdown Voltage ; Doping Concentration ; Gate Voltage ; Oxide Thickness |
| Abstract |
Analytical expression for the breakdown voltage of the gated diodes were derived as f function of doping concentration and gate voltage, and verified by numerical simulations using ATLAS. The analytical results are in good agreement with simulation results within 5% error when the gate voltage changes from -50V to 130V in case of ND = 1×1015 cm^{-3} and within 10% error when the doping concentration is changed from 5×1014 cm^{-3} to 2×1015 cm6{-3}, respectively. |