| Title |
Effects of SiO_2 Buffer Layer on Properties of ZnO thin films and Characteristics of SAW Devices with a Multilayered Configuration of IDT/ZnO/SiO_2/Si |
| Authors |
이진복(Lee, Jin-Bok) ; 이명호(Lee, Myeong-Ho) ; 박진석(Park, Jin-Seok) |
| Keywords |
ZnO ; SiO_2 Buffer ; Si Orientation ; Multi-Layered SAW Device ; (002)-Orientation |
| Abstract |
ZnO thin films were deposited on various substrates, such as Si-(111), SiO_2(5000 AA by thermal CVD)/Si-(100), and SiO_2(2000 AA by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO_2/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO_2buffer. |