| Title |
Characteristics of TiO_2-SnO_2 Thin Films Fabricated Using Sol-Gel Method |
| Authors |
류도현(You, Do-Hyun) ; 육재호(Yuk, Jae-Ho) ; 임경범(Lim, Kyung-Bum) |
| Keywords |
TiO_2-SnO_2 thin films ; sol-gel method ; hydrolysis ; stoichiometry |
| Abstract |
TiO_2-SnO_2 thin films are fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. The thickness of thin films increase about 0.03~0.04μm every a dipping. The permittivity and dissipation factor of TiO_2-SnO_2 thin films decrease with increasing frequency. Thin films show semiconductive characteristics above 400^{ cric}C. |