| Title |
Fabrication and Properties of SCT Thin Film by RF Sputtering Method |
| Keywords |
Thin Film ; Deposition Condition ; Dielectric Constant ; Dielectric Loss |
| Abstract |
The (S r_{0.85}C a_{0.15})Ti O_3(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ SiO_2/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ O_2 ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[ AA/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within pm4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy. |