KIEE - The Transactions of the Korean Institute of Electrical Engineers

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The Transactions of the Korean Institute of Electrical Engineers

The Transactions of the Korean Institute of Electrical Engineers

ISO Journal TitleTrans. Korean. Inst. Elect. Eng.

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Title	Capacitance-Voltage Characteristics in the Double Layers of SiO_2/Si_3N_4
Authors	Hong, Nung-Pyo(Hong, Nung-Pyo) ; Hong, Jin-Woong(Hong, Jin-Woong)
Page	pp.464-468
ISSN	1975-8359
Keywords	Electret ; Oxide (SiO_2) ; Nitride (Si_3N_4) ; C-V Plot ; HTB(High Temperature Bias)
Abstract	The double layers of SiO_2/Si_3N_4 have superior charge storage stability than a single layer of SiO_2. Many researchers are very interested in the charge storage mechanism of SiO_2/Si_3N_4 [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of Si_4N_4 have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of SiO_2/Si_4N_4 by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

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