KIEE - The Transactions of the Korean Institute of Electrical Engineers

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The Transactions of the Korean Institute of Electrical Engineers

The Transactions of the Korean Institute of Electrical Engineers

ISO Journal TitleTrans. Korean. Inst. Elect. Eng.

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Title	A Study on the SAW Characteristics of the AIN Thin Film Prepared by Reactive RF Magnetron Sputtering System
Authors	고봉철 ; 전순배 ; 황영한 ; 김재욱 ; 남창우 ; 이규철
Page	pp.73-78
ISSN	1975-8359
Keywords	reactive RF magnetron sputter ; AIN thin film ; SAW device
Abstract	AIN thin film has been deposited on the AI_2O_3substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33［㏈］. SAW velocity of IDTs/AIN/AI_2O_3structure and IDTs/AIN/AI_2O_3/Si structure were about 5480［㎧］and 5040［㎧］respectively.

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