KIEE - The Transactions of the Korean Institute of Electrical Engineers

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The Transactions of the Korean Institute of Electrical Engineers

The Transactions of the Korean Institute of Electrical Engineers

ISO Journal TitleTrans. Korean. Inst. Elect. Eng.

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Title	Depleted Optical Thyristor using Vertical-Injection Structure for High Isolation Between Input and Output
Authors	최운경(Choi Woon-Kyung) ; 김두근(Kim Doo-Gun) ; 문년태(Moon Yon-Tae) ; 김도균(Kim Do-Gyun) ; 최영완(Choi Young-Wan)
Page	pp.30-34
ISSN	1975-8359
Keywords	Depleted Optical Thyristor(DOT) ; Finite Difference Method(FDM) ; Optical CDMA ; Optical ATM ; Optical Interconnection
Abstract	This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.

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