| Title |
Chemical Mechanical Polishing Characteristics of BTO Films using TiO_2- and BaTiO_3-Mixed Abrasive Slurry (MAS) |
| Authors |
이우선(Lee, Woo-Sun) ; 서용진(Seo, Yong-Jin) |
| Keywords |
CMP (Chemical Mechanical Polishing) ; BTO (BaTiO_3) ; MAS (Mixed Abrasive Slurry) |
| Abstract |
In this study, the sputtered BTO film was polished by CMP process with the self-developed BaTiO_3- and TiO_2-mixed abrasives slurries (MAS), respectively. The removal rate of BTO (BaTiO_3) thin film using the BaTiO_3-mixed abrasive slurry (BTO-MAS) was higher than that using the TiO_2-mixed abrasives slurry (TiO_2-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of BaTiO_3 abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%) below 5% was obtained in each abrsive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM). |