• 대한전기학회
Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
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Title Photodissolution, photodiffusion characteristics and holographic grating formation on Ag-doped As_{40}Ge_{10}Se_{15}S_{35} chalcogenide thin film
Authors 정홍배(Chung, Hong-Bay)
Page pp.461-466
ISSN 1975-8359
Keywords Photodissolution ; Photodiffusion ; VAPs ; Ag Polarized-Photodoping ; Holographic Grating
Abstract In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide As_{40}Ge_{10}Se_{15}S_{35} thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide As_{40}Ge_{10}Se_{15}S_{35} thin film and As_{40}Ge_{10}Se_{15}S_{35}/Ag double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, E_g _{opt} of the film, i. e., an exposure of sub-bandgap light (h{ upsilon}