| Title |
The Etching of HfO_2 Thin Film as the ion Energy Distributions in the BCl_3/Ar Inductively Coupled Plasma System |
| Authors |
김관하(Kim, Gwan-Ha) ; 김경태(Kim, Kyoung-Tae) ; 김종규(Kim, Jong-Gyu) ; 우종창(Woo, Jong-Chang) ; 강찬민(Kang, Chan-Min) ; 김창일(Kim, Chang-Il) |
| Keywords |
Etch ; Plasma diagnostics ; QMS ; ICP ; Ar/BCl_3 |
| Abstract |
In this work, we investigated etching characteristics of HfO_2 thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of HfO_2 thin film is 85.5 nm/min at a BCl_3/(BCl_3+Ar) of 20 % and decreased with further addition of BCl_3 gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of BCl_3. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of HfO_2 over Si is 3.05 at a O_2 addition of 2 sccm into the BCl_3/(BCl_3+Ar) of 20 % plasma. |