| Title |
Electrical Properties of Pt/SCT/Pt Thin Film Structure |
| Authors |
김진사(Kim, Jin-Sa) ; 신철기(Shin, Cheol-Gi) |
| Keywords |
Thin Film ; Deposition Temperature ; Leakage Current |
| Abstract |
The (SrCa)TiO_3(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/SiO_2/Si) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of -80~+90[°C]. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[°C] can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect. |