| Title |
Electrical Characteristics of Organic Ferroelectric Memory Devices Fabricated on Elastomeric Substrate |
| Authors |
정순원(Soon-Won Jung) ; 류봉조(Bong-Jo Ryu) ; 구경완(Kyung-Wan Koo) |
| DOI |
http://doi.org/10.5370/KIEE.2018.67.6.799 |
| Keywords |
Elastomer ; Memory ; Ferroelectric ; Thin-film transistor ; Capacitor ; P(VDF-TrFE) ; IGZO |
| Abstract |
We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed 15 cm2V-1s-1 and 106, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices. |