| Title |
Analysis of Mixed Gas Plasma of Ar/CF4 with O2 Added Using Fluid Simulation |
| Authors |
왕태희(Tae-hui Wang) ; 정성현(Sung-Hyeon Jung) ; 이호준(Ho-Jun LEE) |
| DOI |
https://doi.org/10.5370/KIEE.2023.72.10.1200 |
| Keywords |
Radical; Electron density; Reaction rate; Number density |
| Abstract |
In this study, simulations based on fluid plasma approximation were conducted to optimize the etching process by understanding the plasma characteristics of Ar/CF4 mixtures and the changes in characteristics when O2 is added, considering real processes. To enhance the ionization efficiency of CF4 gas primarily used in the etching process, Ar was mixed. We analyzed the radical density, which determines plasma characteristics and etching kinetics, according to the Ar/CF4 mixing ratio. Additionally, to account for the actual process, O2 gas was added, and we analyzed the characteristics and changes in plasma properties according to the O2 gas ratio. It was confirmed that Ar had the greatest influence on electron density, followed by CF4. The F radical density, used for chemical etching, increases with the ratio of CF4, while the presence of O2 leads to a decrease in C radicals |