| Title |
SnS2/p-Si Heterojunction Photodetector |
| Authors |
오창균(Chang-Gyun Oh) ; 차윤미(Yun-Mi Cha) ; 이경남(Gyeong-Nam Lee) ; 정복만(Bok-Mahn Jung) ; 김준동(Joondong Kim) |
| DOI |
http://doi.org/10.5370/KIEE.2018.67.10.1370 |
| Keywords |
SnS2 ; Photodetector ; Photoresponse ; p-Si ; 2D material |
| Abstract |
A heterojunction SnS2/p-Si photodetector was fabricated by RF magnetron sputtering system. SnS2 was formed with 2-inch SnS2 target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at 500℃ to enhance the contact quality. 2D material such as SnS2, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, SnS2 has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of SnS2 offers the advantage for the large on-off current ratio and low leakage current. The SnS2/p-Si photodetector clearly shows the current rectification when the thickness of SnS2 is 80 nm compared to when it is 135 nm. The highest photocurrent is 19.73 μA at the wavelength of 740 nm with SnS2 thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer. |