B. J Baliga, 1996, Power Semiconductor Devices, PWS Publi- shing Company, Vol. boston, No. ma, pp. 373

J Hudgins, Mar 2013, Power Electronic Devices in the Future, IEEE J. Emerg. Sel. Top. Power Electron., Vol. 1, No. 1, pp. 11-17

X. Huang, F. C. Lee, Q. Li, W. Du, Jun 2016, High-Frequency, High-Efficiency GaN-Based Interleaved CRM Bidirectional Buck/Boost Converter with Inverse Coupled Inductor, IEEE Trans. Power Electron., Vol. 31, No. 6, pp. 4343-4352

X. Zhong, X. Wu, Oct 2014, An All-SiC High-Frequency Boost DC-DC Converter Operating at 320°C Junction Temperature, IEEE Trans. Power Electron., Vol. 29, No. 10, pp. 5091-5096

X. Hueng., Fred C. Lee, Mar 2015, MHz GaN-based interleaved CRM bi-directional buck/boost converter with coupled inductor, IEEE Applied Power Electronics Conf. Exposition (APEC), pp. 2075-2082

Texas Instruments, 2019, IGBT & SiC Gate Driver Fundamentals, 3Q

Alex Lidow, GaN Transistor for Efficient Power Convert- sion 2nd

K. B. Wu, G. H. Shiue, May 2008, Delaunay-Voronoi Modeling of Power-Ground Planes with Source Port Correction, IEEE Trans. Adv. Packag., Vol. 31, No. 2, pp. 303-310

C. Liu, J. Mao. M. Tang, Aug 2010, A New Power-Ground Plane Modeling Method with Rectangle and Triangle Segmetation, IEEE Trans. Adv. Packag., Vol. 33, No. 3, pp. 639-646

SI-Soek Yang, Nov 2019, Parasitic Inductance Reduction Design Method of Vertical Lattice Loop Structure for Stable Driving of GaN HEMT, IEEE International Future Enenergy Electronics Conf.(IFEEC), pp. 75-82

R. Fu, Alexander Grekov, Sep 2013, Parasitic modeling for accurate inductive switching simulation of converters using SiC devices, in Proc. Energy Convers. Congr. Expo, pp. 1259-1265