KIEE - The Transactions of the Korean Institute of Electrical Engineers

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W. Saito, T. Nitta, Y. Kakiuchi, Y. Saito, K. Tsuda, I. Omura, M. Yamaguchi, "Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure," IEEE Trans. Electron Devices, vol. 54, no. 8, pp. 1825-1830, 2007.

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M. Östling, "Silicon carbide power devices: evolution, applications, and future opportunities," IEEE Electron Devices Mag., vol. 2, no. 4, pp. 30-35, 2024.

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S. Maniktala, "Switching Power Supplies A-Z," Newnes, Oxford, pp. 311-341, 2012.

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R. S. Saxena, M. J. Kumar, "Polysilicon spacer gate technique to reduce gate charge of a trench power MOSFET," IEEE Trans. Electron Devices, vol. 59, no. 3, pp. 738-744, 2012.

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H. Gerstner, A. Endruschat, T. Heckel, C. Joffe, B. Eckardt, M. März, "Non-linear input capacitance determination of WBG power FETs using gate charge measurements," pp. 247-253, Proc. 6th Workshop Wide Bandgap Power Devices and Appl. (WiPDA), 2018.

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B. J. Baliga, "Advanced Power MOSFET Concepts," Springer, New York, NY, pp. 66-72, 2010.

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Y. Xiong, S. Sun, H. Jia, P. Shea, Z. J. Shen, "New physical insights on power MOSFET switching losses," IEEE Trans. Power Electron., vol. 24, no. 2, pp. 525-531, 2009.

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T. Horiguchi, S.-I. Kinouchi, Y. Nakayama, T. Oi, H. Urushibata, S. Okamoto, S. Tominaga, H. Akagi, "Short-circuit protection method based on a gate charge characteristic," IEEJ J. Ind. Appl., vol. 4, no. 4, pp. 360-369, 2015.

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T. Kachi, "Development of GaN trench MOSFET process technologies," Appl. Phys. Express, vol. 19, no. 1, 2026.

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K. Wang, L. Liang, Z. Zhang, Z. Guo, K. Wen, Z. Zhang, "A review on cell structure optimization of IGBT under overload condition," IEEE Trans. Electron Devices, vol. 73, no. 2, pp. 716-730, 2026.

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N. Iwamuro, T. Laska, "IGBT history, state-of-the-art, and future prospects," IEEE Trans. Electron Devices, vol. 64, no. 3, pp. 741-752, 2017.

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B. Yu, W.-Y. Lu, H. Lu, Y. Taur, "Analytic charge model for surrounding-gate MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 3, pp. 492-496, 2007.

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Y. Ren, M. Xu, J. Zhou, F. C. Lee, "Analytical loss model of power MOSFET," IEEE Trans. Power Electron., vol. 21, no. 2, pp. 310-319, 2006.

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T. Kimoto, A. Iijima, H. Tsuchida, T. Miyazawa, T. Tawara, A. Otsuki, T. Kato, Y. Yonezawa, "Understanding and reduction of degradation phenomena in SiC power devices," pp. 2A-1.1-2A-1.7, Proc. 2017 IEEE Int. Reliab. Phys. Symp. (IRPS), 2017.

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G. Greco, F. Iucolano, F. Roccaforte, "Review of technology for normally-off HEMTs with p-GaN gate," Mater. Sci. Semicond. Process., vol. 78, pp. 96-106, 2018.

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B. J. Baliga, "Fundamentals of Power Semiconductor Devices," Springer, Cham, Switzerland, pp. 280-310, 2019.

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R. Stark, A. Tsibizov, I. Kovacevic-Badstuebner, T. Ziemann, U. Grossner, "Gate capacitance characterization of silicon carbide and silicon power MOSFETs revisited," IEEE Trans. Power Electron., vol. 37, no. 9, pp. 10572-10584, 2022.

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T.-T. Nguyen, A. Ahmed, T. V. Thang, J.-H. Park, "Gate oxide reliability issues of SiC MOSFETs under short-circuit operation," IEEE Trans. Power Electron., vol. 30, no. 5, pp. 2445-2455, 2015.

24

T. Liu, S. Zhu, M. H. White, A. Salemi, D. Sheridan, A. K. Agarwal, "Time-dependent dielectric breakdown of commercial 1.2 kV 4H-SiC power MOSFETs," IEEE J. Electron Devices Soc., vol. 9, pp. 633-639, 2021.

25

T. Hatakeyama, H. Hirai, M. Sometani, D. Okamoto, M. Okamoto, S. Harada, "Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs," J. Appl. Phys., vol. 131, no. 14, 2022.

KIEEThe Transactions of
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KIEEThe Transactions ofthe Korean Institute of Electrical Engineers