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2022-11

P.1646

Design of 1.2 kV SiC Trench MOSFET for suppression on Electric Field Crowding at Gate Oxide

박영은(Yeongeun Park) ; 김채윤(Chaeyun Kim) ; 윤효원(Hyowon Yoon) ; 강규혁(Gyuhyeok Kang) ; 김광재(Gwangjae Kim) ; 석오균(Ogyun Seok)